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n o t re co mmended f o r new de s i g n not recommended for new design MRF9060NR1 1 rf device data freescale semiconductor rf power field effect transistor n - channel enhancement - mode lateral mosfet designed for broadband commercial and i ndustrial applications with frequen- cies up to 1000 mhz. the high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. ? typical performance at 945 mhz, 26 volts output power ? 60 watts pep power gain ? 18.0 db efficiency ? 40% (two tones) imd ? - 31.5 dbc ? capable of handling 5:1 vswr, @ 26 vdc, 945 mhz, 60 watts cw output power features ? excellent thermal stability ? characterized with series equivalent large - signal impedance parameters ? integrated esd protection ? 200 c capable plastic package ? n suffix indicates lead - free terminations. rohs compliant. ? to - 270 - 2 available in tape and reel. r1 suffix = 500 units per 24 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain - source voltage v dss - 0.5, +65 vdc gate - source voltage v gs - 0.5, + 15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 223 1.79 w w/ c storage temperature range t stg - 65 to +150 c operating junction temperature t j 200 c table 2. thermal characteristics characteristic symbol value (1) unit thermal resistance, junction to case r jc 0.56 c/w table 3. esd protection characteristics test conditions class human body model 1 (minimum) machine model m2 (minimum) charge device model c6 (minimum) table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22 - a113, ipc/jedec j - std - 020 3 260 c 1. mttf calculator available at http://www.freescale.com/rf . select software & tools/development tools/calculators to access mttf calculators by product. document number: mrf9060n rev. 13, 6/2009 freescale semiconductor technical data MRF9060NR1 945 mhz, 60 w, 26 v lateral n - channel broadband rf power mosfet case 1265 - 09, style 1 to - 270 - 2 plastic ? freescale semiconductor, inc., 2008 - 2009. all rights reserved.
n o t re co mmended f o r new de s i g n not recommended for new design 2 rf device data freescale semiconductor MRF9060NR1 table 5. electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 26 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 200 adc) v gs(th) 2 2.8 4 vdc gate quiescent voltage (v ds = 26 vdc, i d = 450 madc) v gs(q) 3 3.7 5 vdc drain - source on - voltage (v gs = 10 vdc, i d = 1.3 adc) v ds(on) ? 0.21 0.4 vdc forward transconductance (v ds = 10 vdc, i d = 4 adc) g fs ? 5.3 ? s dynamic characteristics input capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c iss ? 101 ? pf output capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 53 ? pf reverse transfer capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 2.5 ? pf functional tests (in freescale test fixture, 50 ohm system) two - tone common - source amplifier power gain (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) g ps 17 18 ? db two - tone drain efficiency (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) 37 40 ? % 3rd order intermodulation distortion (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) imd ? - 31.5 -28 dbc input return loss (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) irl ? - 14.5 -9 db two - tone common - source amplifier power gain (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) g ps ? 18 ? db two - tone drain efficiency (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) ? 40 ? % 3rd order intermodulation distortion (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) imd ? -31 ? dbc input return loss (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) irl ? - 12.5 ? db
n o t re co mmended f o r new de s i g n not recommended for new design MRF9060NR1 3 rf device data freescale semiconductor figure 1. 930 - 960 mhz broadband test circuit schematic z10 0.060 x 0.520 microstrip z11 0.360 x 0.270 microstrip z12 0.060 x 0.270 microstrip z13 0.130 x 0.060 microstrip z14 0.300 x 0.060 microstrip z15 0.210 x 0.060 microstrip z16 0.600 x 0.060 microstrip z17 0.290 x 0.060 microstrip z18 0.340 x 0.060 microstrip z1 0.240 x 0.060 microstrip z2 0.240 x 0.060 microstrip z3 0.500 x 0.100 microstrip z4 0.100 x 0.270 x 0.080 , taper z5 0.330 x 0.270 microstrip z6 0.120 x 0.270 microstrip z7 0.270 x 0.520 x 0.140 , taper z8 0.240 x 0.520 microstrip z9 0.340 x 0.520 microstrip rf input rf output c6 c1 z16 v dd z18 + v gg z1 z3 z7 z15 z17 c13 b2 b1 c17 + z4 z2 c7 c2 l1 c14 c16 + c15 + z14 z13 z12 c10 c11 c12 l2 c3 c9 c4 c5 c8 z8 z9 dut z10 z5 z6 z11 table 6. 930 - 960 mhz broadband test circuit component designations and values part description part number manufacturer b1 short ferrite bead 2743019447 fair - rite b2 long ferrite bead 2743029446 fair - rite c1, c7, c13, c14 47 pf chip capacitors atc100b470jt500xt atc c2, c3, c11 0.8 - 8.0 gigatrim variable capacitors 27291sl johanson c4, c5 11 pf chip capacitors (MRF9060NR1) 10 pf chip capacitors (mrf9060nbr1) atc100b110jt500xt atc100b100jt500xt atc c6, c15, c16 10 f, 35 v tantalum chip capacitors t491d106k035at kemet c8, c9 10 pf chip capacitors atc100b100jt500xt newark c10 3.9 pf chip capacitor atc100b3r9ct500xt atc c12 1.7 pf chip capacitor atc100b1r7bt500xt atc c17 220 f electrolytic chip capacitor mcax63v227m13x22 multicomp l1, l2 12.5 nh inductors a04t - 5 coilcraft board material 30 mil glass teflon ? , r = 2.55 copper clad, 2 oz cu rf - 35 - 0300 taconic
n o t re co mmended f o r new de s i g n not recommended for new design 4 rf device data freescale semiconductor MRF9060NR1 cut out area wb1 c1 c2 c3 c4 c6 c7 c9 c8 c10 c5 c11 c12 c13 c14 c15 c16 c17 l1 l2 b1 b2 v dd v gg mrf9060mb wb2 input output figure 2. 930 - 960 mhz broadband test circuit component layout mrf9060m freescale has begun the transition of marking printed ci rcuit boards (pcbs) with the freescale semiconductor signature/logo. pcbs may have either motorola or freescale markings during the transition period. these changes will have no impact on form, fit or function of the current product.
n o t re co mmended f o r new de s i g n not recommended for new design MRF9060NR1 5 rf device data freescale semiconductor typical characteristics g ps 960 11 19 ?36 50 irl v dd = 26 vdc p out = 60 w (pep) i dq = 450 ma two?tone, 100 khz tone spacing f, frequency (mhz) figure 3. class ab broadband circuit performance g ps , power gain (db) ?10 ?18 ?14 imd, intermodulation distortion (dbc) irl, input return loss (db) ?12 ?16 18 45 17 40 16 35 15 ?28 14 ?30 13 ?32 12 ?34 955 950 945 940 935 930 , drain efficiency (%) figure 4. power gain versus output power figure 5. intermodulation distortion versus output power figure 6. intermodulation distortion products versus output power 100 8 20 0.1 0 60 v dd = 26 vdc i dq = 450 ma f = 945 mhz p out , output power (watts) avg. figure 7. power gain and efficiency versus output power g ps , power gain (db) , drain efficiency (%) 18 50 16 40 14 30 12 20 10 10 110 g ps 100 19 i dq = 625 ma 450 ma v dd = 26 vdc f1 = 945 mhz f2 = 945.1 mhz p out , output power (watts) pep g ps , power gain (db) 275 ma 500 ma 18.5 18 17.5 17 16.5 10 1 100 ?55 ?15 i dq = 275 ma 450 ma v dd = 26 vdc f1 = 945 mhz f2 = 945.1 mhz p out , output power (watts) pep intermodulation distortion (dbc) imd, 500 ma 625 ma ?20 ?30 ?40 ?50 110 ?45 ?35 ?25 100 ?80 ?10 7th order v dd = 26 vdc i dq = 450 ma f1 = 945 mhz f2 = 945.1 mhz p out , output power (watts) pep intermodulation distortion (dbc) imd, 5th order 3rd order ?20 ?30 ?40 ?50 ?60 ?70 110 imd
n o t re co mmended f o r new de s i g n not recommended for new design 6 rf device data freescale semiconductor MRF9060NR1 typical characteristics figure 8. power gain, efficiency, and imd versus output power intermodulation distortion (dbc) imd, 100 8 20 ?60 60 p out , output power (watts) pep g ps , power gain (db) , drain efficiency (%) 18 40 16 20 14 0 12 ?20 10 ?40 110 imd v dd = 26 vdc i dq = 450 ma f1 = 945 mhz f2 = 945.1 mhz g ps 210 10 11 t j , junction temperature ( c) this above graph displays calculated mttf in hours x ampere 2 drain current. life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. divide mttf factor by i d 2 for mttf in a particular application. 10 10 10 8 mttf factor (hours x amps 2 ) 90 110 130 150 170 190 100 120 140 160 180 200 figure 9. mttf factor versus junction temperature 10 9
n o t re co mmended f o r new de s i g n not recommended for new design MRF9060NR1 7 rf device data freescale semiconductor f mhz z source z load 930 945 960 0.63 + j0.57 0.57 + j0.45 0.60 + j0.41 1.8 + j0.84 1.7 + j0.55 1.6 + j0.36 v dd = 26 v, i dq = 450 ma, p out = 60 w pep figure 10. series equivalent source and load impedance f = 960 mhz z o = 2 f = 930 mhz f = 930 mhz f = 960 mhz z load z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network z source
n o t re co mmended f o r new de s i g n not recommended for new design 8 rf device data freescale semiconductor MRF9060NR1 package dimensions
n o t re co mmended f o r new de s i g n not recommended for new design MRF9060NR1 9 rf device data freescale semiconductor
n o t re co mmended f o r new de s i g n not recommended for new design 10 rf device data freescale semiconductor MRF9060NR1
n o t re co mmended f o r new de s i g n not recommended for new design MRF9060NR1 11 rf device data freescale semiconductor product documentation, tools and software refer to the following documents to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in plastic packages ? an1955: thermal measurement methodology of rf power amplifiers ? an3789: clamping of high power rf transistors and rfics in over - molded plastic packages engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator for software and tools, do a part number search at http://www.freescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 12 sept. 2008 ? data sheet revised to reflect part status change, p. 1, including use of applicable overlay. ? replaced case outline 1265 - 08 with 1265 - 09, issue k, p. 1, 8 - 10. corrected cross hatch pattern in bottom view and changed its dimensions (d2 and e3) to minimum value on source contact (d2 changed from min - max .290 - .320 to .290 min; e3 changed from min - max .150 - .180 to .150 min). added jedec standard package number. ? updated part numbers in table 6, component designations and values, to rohs compliant part numbers, p. 3 ? added product documentation and revision history, p. 11 13 june 2009 ? modified data sheet to reflect msl rating change from 1 to 3 as a result of the standardization of packing process as described in product and process change notification number, pcn13516, p. 1 ? added electromigration mttf calculator availability to product documentation, tools and software, p. 11
n o t re co mmended f o r new de s i g n not recommended for new design 12 rf device data freescale semiconductor MRF9060NR1 how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1 - 800 - 441 - 2447 or +1 - 303 - 675 - 2140 fax: +1 - 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2008 - 2009. all rights reserved. document number: mrf9060n rev. 13, 6/2009 rohs- compliant and/or pb - free versions of freescale products have the functionality and electrical characteristics of their non - rohs- compliant and/or non - pb - free counterparts. for further information, see http://www.freescale.com or contact your freescale sales representative. for information on freescale?s environmental products pr ogram, go to http: //www .freescale.com/epp.

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